AUIRFR4104 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive appli-
cations and a wide variety of other applications.
AUIRFR4104
AUIRFU4104
D
V_(BR)DSS
40V
R_DS(on) max.
5.5mΩ
I_{D (Silicon Limited)}
119A
S
I_{D (Package Limited)}
42A
D
S
G
D-Pak
AUIRFR4104
S
D
I-Pak ^G
AUIRFU4104
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θJA
j Junction-to-Case
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Max.
119
84
42
480
140
0.95
± 20
145
310
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y 10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
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1
02/10/2010