AO3422 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

Features
V_DS (V) = 55V
I_D = 2.1A (V_GS = 4.5V)
R_DS(ON) < 160mΩ (V_GS = 4.5V)
R_DS(ON) < 200mΩ (V_GS = 2.5V)
AO3422
N-Channel Enhancement Mode Field Effect Transistor
TO-236
(SOT-23)
General Description
The AO3422 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. It
offers operation over a wide gate drive range from
2.5V to 12V. This device is suitable for use as a load
switch. Standard product AO3422 is Pb-free (meets
ROHS & Sony 259 specifications). AO3422L is a
Green Product ordering option. AO3422 and
AO3422L are electrically identical.
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
55
±12
2.1
1.7
10
1.25
0.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
75
115
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
48
Max
100
150
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
2014-5-28
1
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