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| AO3402 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor | |||
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AO3402,AO3402L
N-Channel Enhancement Mode Field Effect Transistor
TO-236
( SO T-2 3) To p V iew
Features
VDS (V) = 30V
ID = 4 A
RDS(ON) < 55m⦠(VGS = 10V)
RDS(ON) < 70m⦠(VGS = 4.5V)
RDS(ON) < 110m⦠(VGS = 2.5V)
D
S
General Description
The AO3402 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO3402L( Green Product ) is offered in
a lead-free package.
G
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
4
3.4
15
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ⤠10s
Steady-State
RθJA
70
100
90
125
Maximum Junction-to-Lead C
Steady-State
RθJL
63
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
2014-5-26
1
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