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3P4MH Datasheet, PDF (1/4 Pages) NEC – THYRISTORS | |||
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3P4MH, 3P6MH
The 3P4MH and 3P6MH are P-gate fully diffused mold
SCRs with an average on-current of 3 A. The repeat peak off-
voltages (and reverse voltages) are 400 V and 600 V.
PACKAGE DRAWING (UNIT: mm)
FEATURES
⢠This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
⢠Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact switches of consumer electronic euipments,
electric equipments, audio quipments, and light indutry
equipements
*TC test bench-mark
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Effective on-state current
Surge on-state current
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
Symbol
VRSM
VDSM
VRRM
VDRM
IT(AV)
IT(RMS)
ITSM
â« it2dt
dIT/dt
PGM
PG(AV)
IFGM
VRGM
Tj
Tstg
3P4MH
3P6MH
500
700
500
700
400
600
400
600
3 (Tc = 87°C, Single half-wave, θ = 180°)
4.7
65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)
20 (1 msâ¤tâ¤10 ms)
50
2 (fâ¥50 Hz, Dutyâ¤10%)
0.2
1 (fâ¥50 Hz, Dutyâ¤10%)
6
â40 to +125
â55 tp +150
Ratings
V
V
V
V
A
A
A
Unit
RGK = 1 kâ¦
RGK = 1 kâ¦
RGK = 1 kâ¦
RGK = 1 kâ¦
Refer to Figure 11.
â
Refer to Figure 2.
A2s
A/µs
W
W
A
V
°C
°C
â
â
Refer to Figure 3.
â
â
â
â
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