KGH25N120NDA Datasheet, PDF (5/6 Pages) KEC(Korea Electronics) – SEMICONDUCTOR TECHNICAL DATA

KGH25N120NDA
Fig 13. Gate Charge Characteristics
16
Common Emitter
14 R_L = 24Ω
T_C = 25 C
12
600V
10
8
6
Vcc = 200V
400V
4
2
0
0 20 40 60 80 100 120 140 160 180 200 220
Gate Charge Q_g (nC)
Fig 15. Turn-Off SOA
100
Fig 14. SOA Characteristics
100 ^IC ^{MAX (Pulsed)}
I_C MAX (Continuous)
10
50µs
100µs
1
1ms
0.1
0.01
Single nonrepetitive pulse
Tc= 25 C
Curves must be derated
linearly with increase
in temperature
0.1
1
10
DC
100
1000
Collector-Emitter Voltage V_CE (V)
10
Safe Operating Area
V_GE = 15V, T_C =125 C
1
1
10
100
1000
Collector-Emitter Voltage V_CE (V)
Fig 16. Transient Thermal Impedance of IGBT
10
1
0.5
0.1
0.2
0.1
0.05
0.01
0.02
0.01
1E-3
1E-5
Single Pluse
1E-4
1E-3
0.01
P_DM
t₁
t₂
1. Duty factor D=t1/t2
2. Peak Tj = Pdm Zthjc + T_C
0.1
1
10
Rectangular Pulse Duration (sec)
2009. 2. 19
Revision No : 2
5/6