KTX302U Datasheet, PDF (3/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)

KTX302U
Q ₁ (PNP TRANSISTOR)
I _C - V_CE
-240
-200
-160
-120
-80
I_B =-2.0mA
COMMON EMITTER
Ta=25 C
I _B =-1.5mA
I _B =-1.0mA
I_B =-0.5mA
-40
I_B =-0.2mA
I _B =0mA
0
0 -1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE V_CE (V)
h _FE - I _C
3k
COMMON EMITTER
1k
500
300
100
50
30
-0.1 -0.3
Ta=100 C
Ta=25 C
Ta=-25 C
V_CE =-6V
V_CE =-1V
-1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I_C (mA)
V_CE(sat) - I _C
-1
COMMON EMITTER
-0.5
I_C /I_B =10
-0.3
-0.1
-0.05
-0.03
Ta=100 ^C
Ta=25 C
Ta=-25 C
-0.01
-0.1 -0.3 -1
-3 -10 -30 -100 -300
COLLECTOR CURRENT I _C (mA)
V_BE(sat) - I _C
-10
COMMON EMITTER
-5
I_C/I_B =10
Ta=25 C
-3
-1
-0.5
-0.3
-0.1
-0.1 -0.3 -1
-3 -10 -30 -100 -300
COLLECTOR CURRENT I _C (mA)
f_T - I_C
3k
COMMON EMITTER
V_CE =-10V
1k
Ta=25 C
500
300
100
50
30
10
0.1
0.3 1
3 10 30 100 300
COLLECTOR CURRENT I _C (mA)
2003. 3. 11
Revision No : 1
I _B - V_BE
-1k
-300
COMMON EMITTER
V_CE =-6V
-100
-30
-10
-3
-1
-0.3
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE V_BE (V)
3/4