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KF10N65F_15 Datasheet, PDF (3/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF10N65F
Fig1. ID - VDS
100
VGS=10V
10
VGS=7V
VGS=5V
1
0.1
0.1
1
10
100
Drain - Source Voltage VDS (V)
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50
0
50
100
150
Junction Temperature Tj ( C )
Fig5. IS - VSD
102
100 C
25 C
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4 1.8
Source - Drain Voltage VSD (V)
2013. 8. 21
Revision No : 0
VDS=30V
101
Fig2. ID - VGS
100
100 C
25 C
10-1
2
4
6
8
10
Gate - Source Voltage VGS (V)
Fig4. RDS(ON) - ID
3.0
2.5
2.0
1.5
1.0
VGS=6V
VGS=10V
0.5
0
0 2 4 6 8 10 12 14 16
Drain Current ID (A)
3.0
VGS =10V
IDS = 5A
2.5
Fig6. RDS(ON) - Tj
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
Junction Temperature Tj ( C)
3/6