GM200HB12CT Datasheet, PDF (3/3 Pages) KEC(Korea Electronics) – 1200V/200A 2 IN ONE PACKAGE

GM200HB12CT
Fig 1. Typ. IGBT Output Characteristics IGBT
400
T_j=25 C
T_j=125 C
300
200
100
0
0
1
2
3
4
V_CE (V)
Fig 3. Typ. Transfer Characteristics IGBT
400
T_j=25 C
350
T_j=125 C
300
250
200
150
100
50
0
5
6
7
8
9 10 11 12
V_GE (V)
Fig 5. Forward Characteristics of Diode IGBT
400
350
300
250
200
150
100
50
0
0
T_j=25 C
T_j=125 C
0.4 0.8 1.2 1.6 2.0 2.4
V_F (V)
2009. 6. 19
Revision No : 0
Fig 2. Typ. IGBT Out Characteristics
400
V_GE=17V
V_GE=15V
V_GE=13V
300
V_GE=9V
200
100
0
0
T_j=125 C
1
2
3
4
V_CE (V)
Fig 4. Reverse Bias Operating Area IGBT
450
400
350
300
250
200
150
100
50
V_GE =15V, R_G=2.7Ω, T_j=125 C
0
0
300
600
900
1200 1500
V_CE (V)
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