TIP112 Datasheet, PDF (2/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

TIP112
I _C - V_CE
2.0
500^{µA 450µA 400µA350µA} 300^µA
1.6
250µA
1.2
200µA
0.8
I_B =150µA
0.4
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE V_CE (V)
100K
30K
10K
300
100
30
10
0.01
h_FE - IC
V_CE =4V
0.1
1
10
COLLECTOR CURRENT I _C (A)
100
30
10
3
1
0.3
0.1
0.01
V_BE(sat) , V _CE(sat) - I _C
I _C /I _B =500
V BE(sat)
V_CE(sat)
0.1
1
10
COLLECTOR CURRENT I _C (A)
80
70
60
50
40
30
20
10
0
0
P _D - Ta
50
100
150
200
CASE TEMPERATURE Ta ( C)
1999. 11. 16
Revision No : 1
C _ob - V_CB
1k
500
f=0.1MHz
300
100
50
30
10
5
3
1
0.01
0.1
1
10
100
COLLECTOR-BASE VOLTAGE V_CB (V)
SAFE OPERATING AREA
10
5 ^IC ^MAX(PULSED)
3
DC OPERATION
1
Tc=25 C
0.5
SINGLE NONREPETITIVE
0.3
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
0.1
1
3 5 10
30 50 100
COLLECTOR-EMITTER VOLTAGE V_CE (V)
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