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KU2303D Datasheet, PDF (2/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET
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KU2303D
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Static
Drain to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
BVDSS
IDSS
IGSS
Vth
Drain to Source On Resistance
RDS(ON)
Forward Transconductance
gfs
Dynamic
Input Capacitance
Ciss
Ouput Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Charge
VGS=10V
Qg
VGS=4.5V
Qg
Gate to Source Charge
Qgs
Gate to Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Source to Drain Diode Ratings
Source to Drain Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovered Charge
Qrr
Note 4) Pulse Test : Pulse width <300 , Duty cycle < 2%
TEST CONDITION
MIN.
VGS=0V, ID=250 A
VGS=0V, VDS=30V
VGS= 20V, VDS=0V
VDS=VGS, ID=250 A
VGS=10V, ID=30A
VGS=4.5V, ID=30A
VDS=5V, ID=30A
30
-
-
1.0
(Note4) -
(Note4) -
(Note4) -
-
VDS=15V, f=1MHz, VGS=0V
-
-
f=1MHz
-
-
-
VDS=15V, VGS=10V, ID=30A (Note4)
-
-
-
VDD=15V, VGS=10V
ID=30A, RG=1.6
-
(Note4) -
-
VGS=0V, IS=30A
IS=30A, dI/dt=100A/ s
IS=30A, dI/dt=100A/ s
(Note4) -
-
-
TYP.
-
-
-
-
5.7
11.0
50
937
311
154
1.3
18.4
9.6
3.2
5.0
6.4
7.2
20.0
5.8
0.8
18.6
9.2
MAX. UNIT
-
V
1
A
100 nA
3.0
V
6.8
m
13.2
-
S
-
-
pF
-
-
-
-
nC
-
-
-
-
ns
-
-
1.2
V
-
ns
-
nC
2009. 4. 27
Revision No : 0
2/4
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