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| KTX111T_15 Datasheet, PDF (2/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN/PNP TRANSISTOR | |||
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KTX111T
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE(1) (Note)
hFE(2) (Note)
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Voltage
VBE
Transition Frequency
fT
Collector Output Capacitance
Cob
Note) hFE(1) Classification O:70~140, Y:120~240.
hFE(2) Classification O:25(Min), Y:40(Min).
VCB=35V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100
VCE=6V, IC=400
IC=100 , IB=10
VCE=1V, IC=100
VCE=6V, IC=20
VCB=6V, IE=0, f=1
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE(1) (Note)
hFE(2) (Note)
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Voltage
VBE
Transition Frequency
fT
Collector Output Capacitance
Cob
Note) hFE(1) Classification O:70~140, Y:120~240.
hFE(2) Classification O:25(Min), Y:40(Min).
VCB=-35V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100
VCE=-6V, IC=-400
IC=-100 , IB=-10
VCE=-1V, IC=-100
VCE=-6V, IC=-20
VCB=-6V, IE=0, f=1
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
0.1
0.8
300
7.0
MAX.
0.1
0.1
240
-
0.25
1.0
-
-
UNIT.
V
V
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
-0.1
-0.8
200
13
MAX.
-0.1
-0.1
240
-
-0.25
-1.0
-
-
UNIT.
V
V
2002. 1. 24
Revision No : 1
2/4
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