KPC817 Datasheet, PDF (2/4 Pages) KEC(Korea Electronics) – SEMICONDUCTOR

KPC817 Series
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Forward Current
Input
Reverse Voltage
Power Dissipation
Collector Power Dissipation
Output
Collector Current
Collector-Emitter Voltage
Emitter-Collector Voltage
Total Power Dissipation
Isolation Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
SYMBOL
I_F
V_R
P_D
P_C
I_C
V_CEO
V_ECO
P_tot
V_ISO
T_opr
T_stg
T_sol
RATING
50
6
70
150
50
80
6
200
5000
-50q110
-55~125
260
UNIT
mA
V
mW
mW
mA
V
V
mW
Vrms



ELECTRO-OPTICAL CHARACTERISTICS (Ta=25 unless otherwise noted)
CHARACTERISTIC
Forward
Input
Reverse Current
Terminal Capacitance
Output
Collector Dark Current
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
*Current Transfer Ratio
Collector-Emitter Saturation
Voltage
Transfer
Isolation Resistance
Characteristics ^{Floating Capacitance}
Cut-off Frequency
Rise Time
Fall Time
SYMBOL
V_F
I_R
C_t
I_CEO
TEST CONDITION
I_F=20mA
V_R=4V
V=0, f=1kHz
V_CE=20V, I_F=0
BV_CEO I_C=0.1mA, I_F=0
MIN.
-
-
-
-
TYP.
1.2
-
30
-
MAX.
1.4
10
250
100
80
-
-
BV_ECO
CTR
V_CE(sat)
R_ISO
C_f
F_C
T_r
T_f
10uA, I_F=0
6
-
-
I_F=5mA, V_CE=5V
50
-
600
I_F=20mA, I_C=1mA
-
0.1
0.2
DC500V, 40~60% R.H.
5ƒ10¹⁰ 1ƒ10¹¹
-
V=0, f=1MHz
-
0.6
1.0
V_CE=5V, I_C=2mA, R_L=100ʃ, -3dB
-
V_CE=2V, I_C=2mA, R_L=100ʃ
-
80
-
4
18
V_CE=2V, I_C=2mA, R_L=100ʃ
-
3
18
UNIT
V
uA
pF
nA
V
V
%
V
ʃ
pF
kHz
us
us
I_C
* CTR =
ƒ 100%
I_F
2016. 05. 30
Revision No : 2
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