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KHB7D0N65P1_07 Datasheet, PDF (2/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR
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KHB7D0N65P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
Static
CHARACTERISTIC
SYMBOL
TEST CONDITION
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS
VDS=650V, VGS=0V,
Vth
VDS=VGS, ID=250 A
IGSS
VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=3.75A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=520V, ID=7.0A
VGS=10V
(Note4,5)
VDD=325V
RL=46
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD
IS=7.0A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=7.0A, VGS=0V,
Qrr
dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =8mH, IS=7.0A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 7.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
650
-
-
V
-
0.8
-
V/
-
-
10
A
2
-
4
V
-
-
100 nA
-
1.2
1.4
-
32
40
-
5.4
-
nC
-
12.6
-
-
20
45
-
40
90
ns
-
125 260
-
80
170
-
1310 1700
-
113 147
pF
-
11.4 14.8
-
-
7
A
-
-
28
-
-
1.5
V
-
410
-
ns
-
4
-
C
2007. 5. 10
Revision No : 0
2/7
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