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| KGF30N60KDA Datasheet, PDF (2/8 Pages) KEC(Korea Electronics) – High speed switching | |||
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KGF30N60KDA
ELECTRICAL CHARACTERISTICS (Ta=25Â)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Dynamic
BVCES
ICES
IGES
VGE(th)
VCE(sat)
VGE=0V , IC=250ɵ
VGE=0V, VCE=600V
VCE=0V, VGE=Â20V
VGE=VCE, IC=3mA
VGE=15V, IC=30A
VGE=15V, IC=60A
VGE=15V, IC=30A, TC = 125Â
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Qg
Qge
Qgc
td(on)
VCC=300V, VGE=15V, IC= 30A
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
tr
td(off)
tf
Eon
Eoff
VCC=300V, IC=30A, VGE=15V,RG=10Ê
Inductive Load, TC = 25Â (Note 1)
Total Switching Loss
Ets
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
td(off)
tf
Eon
VCC=300V, IC=30A, VGE=15V,RG=10Ê
Inductive Load, TC = 125Â (Note 1)
Turn-Off Switching Loss
Eoff
Total Switching Loss
Ets
Input Capacitance
Cies
Ouput Capacitance
Coes
VCE=30V, VGE=0V, f=1MHz
Reverse Transfer Capacitance
Cres
Short Circuit Withstand Time
tsc
VCC=300V, VGE=15V, TC=100Â
Note 1 : Energy loss include tail current and diode reverse recovery.
Marking
MIN. TYP. MAX. UNIT
600
-
-
V
-
-
250
ɵ
-
-
Â100 nA
4.5
5.5
7.0
V
-
1.65 2.1
V
-
2.25
-
V
-
1.9
-
V
-
120
-
nC
-
20
-
nC
-
60
-
nC
-
40
-
ns
-
30
-
ns
-
170
-
ns
-
35
-
ns
-
0.55 0.75 mJ
-
0.45 0.65 mJ
-
1.0
1.4
mJ
-
40
-
ns
-
35
-
ns
-
180
-
ns
-
50
-
ns
-
0.55
-
mJ
-
0.65
-
mJ
-
1.2
-
mJ
-
2350 3100 pF
-
160
-
pF
-
95
-
pF
10
-
-
Ǻs
2013. 11. 25
Revision No : 1
2/8
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