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KGF15N120NDS Datasheet, PDF (2/7 Pages) KEC(Korea Electronics) – High speed switching
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KGF15N120NDS
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
Static
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Dynamic
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
SYMBOL
BVCES
ICES
IGES
VGE(th)
VCE(sat)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Cies
Coes
Cres
TEST CONDITION
VGE=0V , IC=1.0mA
VGE=0V, VCE=1200V
VCE=0V, VGE=‚20V
VGE=VCE, IC=15mA
VGE=15V, IC=15A
VGE=15V, IC=15A, TC = 125
VGE=15V, IC=30A
VCC=600V, VGE=15V, IC= 15A
VCC=600V, IC=15A, VGE=15V,RG=10ʃ
Inductive Load, TC = 25
VCC=600V, IC=15A, VGE=15V, RG=10ʃ
Inductive Load, TC = 125
VCE=30V, VGE=0V, f=1MHz
MIN. TYP. MAX. UNIT
1200
-
-
5.0
-
-
-
-
-
V
-
1.0
mA
-
‚100 nA
6.0
7.5
V
1.8
2.1
V
2.1
-
V
2.3
-
V
-
135
-
nC
-
15
-
nC
-
85
-
nC
-
45
-
ns
-
20
-
ns
-
170
-
ns
-
180
-
ns
-
2.0
2.6
mJ
-
0.9
1.2
mJ
-
2.9
3.8
mJ
-
45
-
ns
-
20
-
ns
-
180
-
ns
-
290
-
ns
-
2.1
-
mJ
-
1.4
-
mJ
-
3.5
-
mJ
-
1550 2050
pF
-
50
-
pF
-
35
-
pF
Marking
2014. 5. 26
Revision No : 0
2/7
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