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FMMT312 Datasheet, PDF (2/3 Pages) KEC(Korea Electronics) – 2-PACK MOSFET MODULE
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FMMT312
ELECTRICAL CHARACTERISTICS (@Ta=25 Per Leg, Unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
BVDSS
ID=250ɵ , VGS=0V
Breakdown Voltage Temperature Coefficient ǚBVDSS/ǚTj ID=5mA, Referenced to 25
Gate Threshold Voltage
Vth
VDS=VGS, ID=250ɵ
Drain to Source Leakage Current
VDS=150V, VGS=0V
IDSS
VDS=150V, VGS=0V, Tj=125
Gate to Source Leakage Current
VGS=15V, with protection circuit
IGSS
VGS=-15V, with protection circuit
Drain to Source ON Resistance
RDS(ON)
VGS=10V, ID=400A
Dynamic
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Source Charge
Turn On Delay Time
Rise Time
Turn Off Delay Tine
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tr
Ciss
Coss
Crss
VDS=50V, ID=400A
ID=400A, VDS=75V, VGS=10V
IS
ISP
VSD
ID=400A, VGS=0V
trr
Qrr
MIN. TYP. MAX. UNIT
150
-
-
V
-
0.17
-
V/
3.0
-
5.0
V
-
-
20
ǺA
-
-
250
-
-
10 mA
-
-
-10 mA
-
2.0
3.0 mʃ
-
TBD
-
S
-
TBD
-
-
TBD
-
nC
-
TBD
-
-
TBD
-
-
TBD
-
ns
-
TBD
-
-
TBD
-
-
TBD
-
-
TBD
-
-
TBD
-
pF
-
-
450
A
-
-
2500
-
-
1.3
V
-
TBD
-
ns
-
TBD
-
nC
2014. 1. 09
Revision No : 0
2/3
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