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2N5551S_99 Datasheet, PDF (2/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
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2N5551S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
TEST CONDITION
VCB=120V, IE=0
VCB=120V, IE=0, Ta=100
VEB=4V, IC=0
Collector-Base Breakdown Voltage
V(BR)CBO IC=0.1mA, IE=0
Collector-Emitter
Breakdown Voltage
*
V(BR)CEO IC=1mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO IE=10 A, IC=0
DC Current Gain
*
Collector-Emitter
*
Saturation Voltage
Base-Emitter
*
Saturation Voltage
Transition Frequency
Collector Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
hFE(1)
hFE(2)
hFE(3)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
hfe
NF
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VBE=0.5V, IC=0, f=1MHz
VCE=10V, IC=1mA, f=1kHz
VCE=5V, IC=250 A
Rg=1k , f=10Hz 15.7kHz
MIN.
-
-
-
TYP.
-
-
-
MAX.
50
50
50
UNIT
nA
A
nA
180
-
-
V
160
-
-
V
6
-
-
V
80
-
-
80
-
250
30
-
-
-
-
0.15
V
-
-
0.2
-
-
1.0
V
-
-
1.0
100
-
300 MHz
-
-
6
pF
-
-
20
pF
50
-
200
-
-
8
dB
1999. 11. 30
Revision No : 2
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