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2N5401S_15 Datasheet, PDF (2/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR
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2N5401S
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
TEST CONDITION
VCB=-120V, IE=0
VCB=-120V, IE=0, Ta=100
VEB=-3V, IC=0
Collector-Base Breakdown Voltage
V(BR)CBO IC=-0.1mA, IE=0
Collector-Emitter
Breakdown Voltage
*
V(BR)CEO IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO IE=-10ǺA, IC=0
DC Current Gain
*
Collector-Emitter
*
Saturation Voltage
Base-Emitter
*
Saturation Voltage
Transition Frequency
Collector Output Capacitance
Small-Signal Current Gain
hFE(1)
hFE(2)
hFE(3)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
hfe
Noise Figure
NF
* Pulse Test : Pulse Width∔300ǺS, Duty Cycle∔2%.
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
VCE=-10V, IC=-1mA, f=1kHz
VCE=-5V, IC=-250ǺA
Rg=1kʃ, f=10Hzq15.7kHz
MIN.
-
-
-
TYP.
-
-
-
MAX.
-50
-50
-50
UNIT
nA
ǺA
nA
-160
-
-
V
-150
-
-
V
-5
-
-
V
50
-
-
60
-
240
50
-
-
-
-
-0.2
V
-
-
-0.5
-
-
-1.0
V
-
-
-1.0
100
-
300 MHz
-
-
6
pF
40
-
200
-
-
8
dB
1999. 12. 22
Revision No : 2
2/2