English
Language : 

2N3906A Datasheet, PDF (2/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR
2N3906A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
*
Collector-Emitter
Saturation Voltage
*
Base-Emitter
Saturation Voltage
*
Transition Frequency
Collector Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Collector Output Admittance
Noise Figure
ICEX
IBL
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
hie
hre
hfe
hoe
NF
VCE=-30V, VEB=-3V
VCE=-30V, VEB=-3V
IC=-10 A, IE=0
IC=-1mA, IB=0
IE=-10 A, IC=0
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, IE=0, f=1MHz
VBE=-0.5V, IC=0, f=1MHz
VCE=-10V, IC=-1mA, f=1kHz
VCE=-5V, IC=-0.1mA,
Rg=1k , f=10Hz 15.7kHz
Delay Time
td
Switching Time
Rise Time
tr
Storage Time
tstg
Fall Time
tf
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
MIN.
-
-
-40
-40
-5.0
60
80
100
60
30
-
-
-0.65
-
250
-
-
2.0
1.0
100
3.0
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-50
-50
-
-
-
-
-
300
-
60
-0.25
-0.4
-0.85
-0.95
-
4.5
10
12
10
400
60
UNIT
nA
nA
V
V
V
V
V
MHz
pF
pF
k
x10-4
-
4.0
dB
-
-
35
-
-
35
nS
-
-
225
-
-
75
2002. 2. 1
Revision No : 0
2/5