English
Language : 

2N3904A Datasheet, PDF (2/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
2N3904A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
*
Collector-Emitter
Saturation Voltage
*
Base-Emitter
Saturation Voltage
*
Transition Frequency
Collector Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Collector Output Admittance
ICEX
IBL
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
hie
hre
hfe
hoe
VCE=30V, VEB=3V
VCE=30V, VEB=3V
IC=10 A, IE=0
IC=1mA, IB=0
IE=10 A, IC=0
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, IE=0, f=1MHz
VBE=0.5V, IC=0, f=1MHz
VCE=10V, IC=1mA, f=1kHz
Noise Figure
NF
VCE=5V, IC=0.1mA Rg=1k ,
f=10Hz 15.7kHz
Delay Time
td
Switching Time
Rise Time
tr
Storage Time
tstg
Fall Time
tf
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
MIN.
-
-
60
40
6.0
40
70
100
60
30
-
-
0.65
-
300
-
-
1.0
0.5
100
1.0
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
50
50
-
-
-
-
-
300
-
60
0.2
0.3
0.85
0.95
-
4.0
8.0
10
8.0
400
40
UNIT
nA
nA
V
V
V
V
V
MHz
pF
pF
k
x10-4
-
-
5.0
dB
-
-
35
-
-
35
nS
-
-
200
-
-
50
2002. 2. 1
Revision No : 0
2/5