Z5W48V Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE

SEMICONDUCTOR
TECHNICAL DATA
BEST SUITED FOR OVERVOLTAGE PROTECTION
OF ELECTRONIC SYSTEM :
ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES
ELECTRONIC SYSTEM FOR COMMERCIAL USE
ELECTRONIC SYSTEM FOR INDUSTRIAL USE
FOR COMMUNICATIONS, CONTROLS, MEASURING
INSTRUMENTS, ETC.
FEATURES
High surge power withstanding capabilities that absorb load dump surge.
Excellent surge responsibility for steep surge absorption.
Surface mount type is available for easy applications.
Corresponds to taping packages.
Automotive AEC Q101 Qualified.
MSL Level 1 guaranteed (Tpeak = 260 )
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Allowable Power Dissipation
P
(Note 1)
Non-Repetitive Peak Reverse
Surge Current
I_RSM
(See Fig.1 for the exponents.)
Peak 1-Cycle Surge
Forward Current
I_FSM
(Single Half Sine-wave, t=10ms)
Junction Temperature
T_j
Storage Temperature Range
T_stg
Note 1 : Lead tip temperature T_L=25 .
RATING
5
50
700
-55 175
-40 150
UNIT
W
A
A
Z5W48V
ZENER DIODE SILICON
DIFFUSED-JUNCTION TYPE
C
D
E
G
ANODE
ANODE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
10.0+_ 0.5
8.5+_ 0.5
10.0+_ 0.3
13.5+_ 0.3
15.5+_ 0.5
5.0+_ 0.3
9.0+_ 0.3
2.0+_ 0.5
3.0 +_ 0.5
2.7+_ 0.5
3.3+_ 0.5
7.6 +_ 0.5
H
CATHODE
Weight : 2.5g
CATHODE
DO-218
I _RSM
I _RSM
2
0 10ms
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Zener Voltage
V_Z
Operating Resistance
r_d
Temperature Coefficient
T
Forward Voltage
V_F
Reverse Current
I_R
TEST CONDITION
I_Z=10mA
I_Z=10mA
I_Z=10mA
I_F=6A
I_F=100A
V_R=38.4V
2009. 7. 31
Revision No : 3
MIN.
43.2
-
-
-
-
-
TYP.
48.0
-
39
-
-
-
MAX. UNIT
52.8
V
65
62 mV/
1.0
V
1.2
V
10
A
1/2