USFB13A Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
USFB13A
SCHOTTKY BARRIER TYPE DIODE
SWITCHING TYPE POWER SUPPLY APPLICATIONS.
FEATURES
hLow Profile Surface Mount Package.
hLow Power Loss, High Efficiency.
hFor Use in Low Voltage, High Frequency inverters, Free
Wheeling, and Polarity Protection Applications.
B
A
G
FE
2
C ED
1
CATHODE MARK
H
C
APPLICATION
hSwitching Power Supply.
hReversed Battery Connection Protection.
hDC/DC Converter.
hCellular Phones.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Maximum Repetitive Peak Reverse Voltage V_RRM
30
Average Output Rectified Current
I_O
1
Peak One Cycle Surge Forward Current
I_FSM
22
(Non-Repetitive 60Hz)
Power Dissipation
P_D *
830
Junction Temperature
T_j
-40q125
Storage Temperature Range
T_stg
-40q125
* Mounted on a glass epoxy board (Soldering land : 6mmƒ6mm)
UNIT
V
A
A
mW


J
1. ANODE
2. CATHODE
I
DIM MILLIMETERS
A
1.9 +_ 0.1
B
2.5 +_ 0.1
C
0.61 +_ 0.05
D
0.8 +_ 0.1
E
0.91 +_ 0.05
F
1.2 +_ 0.1
G
1.3 +_ 0.1
H
0.46 +_ 0.1
I
0.11 +_ 0.05
J
0.6 +_ 0.1
USF
Marking
Type Name
BA
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
V_FM
Repetitive Peak Reverse Current
I_RRM
Junction Capacitance
C_j
TEST CONDITION
I_FM=0.7A
I_FM=1.0A
V_RRM=30V
V_R=10V, f=1.0MHz
CATHODE MARK
MIN.
-
-
-
-
TYP.
-
-
5
40
MAX.
0.45
0.52
50
-
UNIT
V
V
ǺA
pF
2007. 5. 11
Revision No : 1
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