USFB13 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
USFB13
SCHOTTKY BARRIER TYPE DIODE
SWITCHING TYPE POWER SUPPLY APPLICATIONS.
FEATURES
Low Profile Surface Mount Package.
Low Power Loss, High Efficiency.
For Use in Low Voltage, High Frequency inverters, Free
Wheeling, and Polarity Protection Applications.
B
A
G
FE
2
C ED
1
CATHODE MARK
H
C
APPLICATION
Switching Power Supply.
Reversed Battery Connection Protection.
DC/DC Converter.
Cellular Phones.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum Repetitive Peak Reverse Voltage V_RRM
Average Output Rectified Current
I_O
Peak One Cycle Surge Forward Current
I_FSM
(Non-Repetitive 60Hz)
Power Dissipation
P_D *
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
30
1
UNIT
V
A
5
A
667
mW
-40 125
-40 125
* Mounted on a glass epoxy board (Soldering land : 6mm 6mm)
J
1. ANODE
2. CATHODE
I
DIM MILLIMETERS
A
1.9 +_ 0.1
B
2.5 +_ 0.1
C
0.61 +_ 0.05
D
0.8 +_ 0.1
E
0.91 +_ 0.05
F
1.2 +_ 0.1
G
1.3 +_ 0.1
H
0.46 +_ 0.1
I
0.11 +_ 0.05
J
0.6 +_ 0.1
USF
Marking
Type Name
Lot No.
A3
CATHODE MARK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
Repetitive Peak Reverse Current
V_FM
I_{RRM (1)}
I_{RRM (2)}
Junction Capacitance
C_j
TEST CONDITION
I_FM=1.0A
V_RRM=5V
V_RRM=30V
V_R=10V, f=1.0MHz
MIN.
-
-
-
-
TYP.
0.43
15
40
30
MAX.
0.47
40
200
-
UNIT
V
A
A
pF
2005. 12. 1
Revision No : 0
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