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TIP41CF_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
TIP41CF
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Complementary to TIP42CF.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
DC
IC
Collector Current
Pulse
ICP
Base Current
IB
Collector Power
Ta=25
PC
Dissipation
Tc=25
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
100
100
5
6
10
2
2
25
150
-55 150
UNIT
V
V
V
A
A
W
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
VCEO(SUS)
ICEO
ICES
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
VCE(sat)
VBE(on)
fT
TEST CONDITION
IC=30mA, IB=0
VCE=60V, IB=0
VCE=100V, VEB=0
VEB=5V, IC=0
VCE=4V, IC=0.3A
VCE=4V, IC=3A
IC=6A, IB=600mA
VCE=4V, IC=6A
VCE=10V, IC=500mA
MIN.
100
-
-
-
30
15
-
-
3.0
TYP.
-
-
-
-
-
-
-
-
-
MAX. UNIT
-
V
0.7 mA
400
A
1
mA
-
75
1.5
V
2.0
V
-
MHz
2007. 5. 21
Revision No : 0
1/2
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