TIP36CA Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 75W Audio Frequency
Amplifier Output Stage.
Complementary to TIP35CA.
Icmax:-25A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Base Current
I_B
Collector Power Dissipation
P_C
(Tc=25 )
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-100
-100
-5
-25
-5.0
125
150
-55 150
UNIT
V
V
V
A
A
W
TIP36CA
TRIPLE DIFFUSED PNP TRANSISTOR
A
N
Q
O
B
K
D
E
d
PP
123
1. BASE
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d
1.00 +_ 0.20
E 3.00 +_ 0.20
F
3.80 +_ 0.20
G 3.50 +_ 0.20
H
I
MJ
13.90 +_ 0.20
12.76 +_ 0.20
23.40 +_ 0.20
K 1.5+0.15-0.05
L 16.50 +_ 0.30
T
M
1.40 +_ 0.20
N 13.60 +_ 0.20
O
9.60 +_ 0.20
P
5.45 +_ 0.30
Q
3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)-E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
I_CBO
I_EBO
V_(BR)CEO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)(1)
V_CE(sat)(2)
V_BE
Transition Frequency
f_T
Note : h_FE(1) Classification R:55~110, O:80~160
TEST CONDITION
V_CB=-100V, I_E=0
V_EB=-5V, I_C=0
I_C=-50mA, I_B=0
V_CE=-5V, I_C=-1.5A
V_CE=-4V, I_C=-15A
I_C=-15A, I_B=-1.5A
I_C=-25A, I_B=-5.0A
V_CE=-5V, I_C=-5A
V_CE=-5V, I_C=-1A
MIN.
-
-
-100
55
15
-
-
-
3.0
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-10
-10
-
160
-
-1.8
-4.0
-1.5
-
UNIT
A
A
V
V
V
MHz
2005. 5. 16
Revision No : 0
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