TIP35C_01 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 75W Audio Frequency
Amplifier Output Stage.
Complementary to TIP36C.
Icmax:25A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25 )
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
100
100
5
25
5.0
125
150
-55 150
UNIT
V
V
V
A
A
W
TIP35C
TRIPLE DIFFUSED NPN TRANSISTOR
A
Q
B
K
D
d
PP
T
1 23
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
15.9 MAX
B
4.8 MAX
C
20.0+_ 0.3
D
2.0+_ 0.3
d
1.0+0.3/-0.25
E
2.0
F
1.0
G
3.3 MAX
H
9.0
I
4.5
MJ
2.0
K
1.8 MAX
L
20.5+_ 0.5
M
2.8
P
5.45+_ 0.2
Q
Φ3.2+_ 0.2
T
0.6+0.3/-0.1
TO-3P(N)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
I_CBO
I_EBO
V_(BR)CEO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)(1)
V_CE(sat)(2)
V_BE
Transition Frequency
f_T
Note : h_FE(1) Classification R:55~110, O:80~160
TEST CONDITION
V_CB=100V, I_E=0
V_EB=5V, I_C=0
I_C=50mA, I_B=0
V_CE=5V, I_C=1.5A
V_CE=4V, I_C=15A
I_C=15A, I_B=1.5A
I_C=25A, I_B=5.0A
V_CE=5V, I_C=5A
V_CE=5V, I_C=1A
MIN.
-
-
100
55
15
-
-
-
3.0
TYP.
-
-
-
-
-
-
-
-
-
MAX.
10
10
-
160
-
1.8
4.0
1.5
-
UNIT
A
A
V
V
V
MHz
2001. 1. 18
Revision No : 3
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