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TIP31CF Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR(GENERAL PURPOSE)
SEMICONDUCTOR
TECHNICAL DATA
TIP31CF
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Complementary to TIP32CF.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Power
Ta=25
Dissipation
PC
Tc=25
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
100
100
5
3
5
1
2
25
150
-55 150
UNIT
V
V
V
A
A
W
W
A
C
U
E
L
L
M
D
D
NN
T
T
123
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX
C
2.70 0.30
S
D
0.85 MAX
E
3.20 0.20
F
3.00 0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60 0.50
K
3.90 MAX
L
1.20
V
M
1.30
N
2.54
O
4.50 0.20
P
6.80
Q
2.60 0.20
H
R
10
S
25
T
5
U
0.5
V 2.60 0.15
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
VCEO(SUS)
ICEO
ICES
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
VCE(sat)
VBE(on)
fT
TEST CONDITION
IC=30mA, IB=0
VCE=60V, IB=0
VCE=100V, VEB=0
VBE=5V, IC=0
VCE=4V, IC=1A
VCE=4V, IC=3A
IC=3A, IB=375mA
VCE=4V, IC=3A
VCE=10V, IC=500mA f=1MHz
MIN.
100
-
-
-
25
10
-
-
3.0
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
0.3
200
1
-
50
1.2
1.8
-
UNIT
V
mA
A
mA
V
V
MHz
2002. 6. 14
Revision No : 0
1/2
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