TIP117F_07 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
TIP117F
EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h_FE=1000(Min.), V_CE=-4V, I_C=-1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP112F.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
Collector Power
Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
RATING
-100
-100
-5
-2
-4
-50
2
20
150
-65 150
UNIT
V
V
V
A
mA
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
C
B
R1
= 10kΩ
R₂
= 0.6kΩ
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
SYMBOL
I_CEO
I_CBO
I_EBO
h_FE
V_CEO(SUS)
V_CE(sat)
V_BE(ON)
C_ob
TEST CONDITION
V_CE=-50V, I_B=0
V_CB=-100V, I_E=0
V_EB=-5V, I_C=0
V_CE=-4V, I_C=-1A
V_CE=-4V, I_C=-2A
I_C=-30mA, I_B=0
I_C=-2A, I_B=-8mA
V_CE=-4V, I_C=-2A
V_CB=-10V, I_E=0, f=0.1MHz
MIN.
-
-
-
1000
500
-100
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-2
-1
-2
-
-
-
-2.5
-2.8
200
UNIT
mA
mA
V
V
V
pF
2007. 5. 21
Revision No : 0
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