TIP117 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

SEMICONDUCTOR
TECHNICAL DATA
TIP117
EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
ᴌHigh DC Current Gain.
: h_FE=1000(Min.), á·¤V_CE=-4V, I_C=-1A.
ᴌLow Collector-Emitter Saturation Voltage.
ᴌComplementary to TIP112.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
Collector Power
Dissipation
Ta=25á´±
Tc=25á´±
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-100
-100
-5
-2
-4
-50
2
50
150
-65ᴕ150
UNIT
V
V
V
A
mA
W
á´±
á´±
A
R
S
D
T
L
C
C
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ3.60 +_ 0.20
3.00
6.70 MAX
13.60+_ 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50+_ 0.20
8.00+_ 0.20
2.90 MAX
TO-220AB
EQUIVALENT CIRCUIT
C
B
R1
= 10kΩ
R₂
= 0.6kΩ
E
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
I_CEO
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
V_CEO(SUS)
V_CE(sat)
V_BE(ON)
C_ob
TEST CONDITION
V_CE=-50V, I_B=0
V_CB=-100V, I_E=0
V_EB=-5V, I_C=0
V_CE=-4V, I_C=-1A
V_CE=-4V, I_C=-2A
I_C=-30mA, I_B=0
I_C=-2A, I_B=-8mA
V_CE=-4V, I_C=-2A
V_CB=-10V, I_E=0, f=0.1MHz
MIN.
-
-
-
1000
500
-100
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-2
-1
-2
-
-
-
-2.5
-2.8
200
UNIT
mA
mA
V
V
V
pF
1999. 11. 16
Revision No : 1
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