TIP112F_07 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
TIP112F
EPITAXIAL PLANAR NPN TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h_FE=1000(Min.), V_CE=4V, I_C=1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP117F.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
Collector Power
Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL RATING
V_CBO
100
V_CEO
100
V_EBO
5
I_C
2
I_CP
4
I_B
50
2
P_C
20
T_j
150
T_stg
-65 150
UNIT
V
V
V
A
mA
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
C
B
R1
= 10kΩ
R₂
= 0.6kΩ
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
I_CEO
I_CBO
I_EBO
h_FE
V_CEO(SUS)
V_CE(sat)
V_BE(ON)
C_ob
V_CE=50V, I_B=0
V_CB=100V, I_E=0
V_EB=5V, I_C=0
V_CE=4V, I_C=1A
V_CE=4V, I_C=2A
I_C=30mA, I_B=0
I_C=2A, I_B=8mA
V_CE=4V, I_C=2A
V_CB=10V, I_E=0, f=0.1MHz
MIN.
-
-
-
1000
500
100
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
2
1
2
-
-
-
2.5
2.8
100
UNIT
mA
mA
V
V
V
pF
2007. 5. 21
Revision No : 0
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