TIP112F Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

SEMICONDUCTOR
TECHNICAL DATA
TIP112F
EPITAXIAL PLANAR NPN TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h_FE=1000(Min.), V_CE=4V, I_C=1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP117F.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
V_CBO
100
V_CEO
100
V_EBO
5
I_C
2
I_CP
4
I_B
50
Collector Power
Ta=25
2
Dissipation
P_C
Tc=25
20
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-65 150
UNIT
V
V
V
A
mA
W
A
U
E
L
L
M
D
D
NN
T
T
123
C
DIM MILLIMETERS
A
10.30 MAX
B
15.30 MAX
C
2.70Ź0.30
S
D
0.85 MAX
E
Φ3.20Ź0.20
F
3.00Ź0.30
G
12.30 MAX
T
RH
0.75 MAX
J
13.60Ź0.50
K
3.90 MAX
L
1.20
V
M
1.30
N
2.54
O
4.50Ź0.20
P
6.80
Q
2.60Ź0.20
H
R
S
10Ɓ
25Ş
T
5Ş
U
0.5
V
2.60Ź0.15
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
C
B
R1
= 10kΩ
R₂
= 0.6kΩ
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
I_CEO
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
V_CEO(SUS)
V_CE(sat)
V_BE(ON)
C_ob
TEST CONDITION
V_CE=50V, I_B=0
V_CB=100V, I_E=0
V_EB=5V, I_C=0
V_CE=4V, I_C=1A
V_CE=4V, I_C=2A
I_C=30mA, I_B=0
I_C=2A, I_B=8mA
V_CE=4V, I_C=2A
V_CB=10V, I_E=0, f=0.1MHz
MIN.
-
-
-
1000
500
100
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
2
1
2
-
-
-
2.5
2.8
100
UNIT
mA
mA
V
V
V
pF
2002. 6. 25
Revision No : 0
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