SMFB13 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING TYPE POWER SUPPLY APPLICATIONS.
FEATURES
Repetitive Peak Reverse Voltage : V_RRM=30V.
Averge Output Rectitifed Current : I_O=1.0A.
Feak Forward Voltage : V_FM=0.42V(max.)
For Use in Low Voltage, High Frequency inverters, Free
Wheeling, and Polarity Protection Applications.
APPLICATION
Switching Power Supply.
Reversed Battery Connection Protection.
DC/DC Converter.
Cellular Phones.
SMFB13
SCHOTTKY BARRIER TYPE DIODE
2
1
C
D
H
G
1. ANODE
2. CATHODE
F
DIM MILLIMETERS
A
2.6+_ 0.05
B
3.5+_ 0.1
C
0.9+_ 0.05
D
1.6+_ 0.05
E
0.65+_ 0.05
F
0.11+_ 0.05
G
0 ~ 0.1
H
0.98+_ 0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Maximum Repetitive Peak Reverse Voltage
Average Output Rectitifed Current
Peak One Cycle Surge Forward Current
(Non-Repetitive 60Hz)
Junction Temperature
Storage Temperature Range
SYMBOL
V_RRM
I_O
I_FSM
T_j
T_stg
RATING
30
1
UNIT
V
A
22
A
-65 150
-65 150
SMF
Marking
Type Name
B13
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
Repetitive Peak Reverse Current
Thermal Resistance
V_FM
I_RRM
R_th(j-1)
R_th(j-a)
TEST CONDITION
I_FM=1.0A
V_RRM=Rated
Junction to lead
Junction to ambient
(on a grass-epoxy board)
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
0.42
50
20
140
UNIT
V
/W
2008 .9 11
Revision No : 7
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