SMAU1G_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – ULTRA FAST RECOVERY RECTIFIER DIODE

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING TYPE POWER SUPPLY APPLICATIONS.
FEATURES
hUltra-Fast Recovery Time for High Efficiency.
hLow Profile Surface Mount Package.
hLow Forward Voltage Drop, High current Capability, and
Low Power Loss.
APPLICATION
hSwitching Power Supply.
hDC/DC Converter.
hHome Appliances, Office Equipment.
hTelecommunication, Factory Automation.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Maximum Repetitive Peak Reverse Voltage
Average Output Rectitifed Current
Peak One Cycle Surge Forward Current
(Non-Repetitive 60Hz)
Junction Temperature
V_RRM
I_O
I_FSM
T_j
Storage Temperature Range
T_stg
RATING
400
1
33
-55q150
-55q150
UNIT
V
A
A


SMAU1G
ULTRA FAST RECOVERY RECTIFIER DIODE
B
2
1
C
G
DIM
A
B
C
D
E
F
G
Unit : mm
MILLIMETERS
4.3 +_ 0.3
2.525 +_ 0.12
1.45 +_ 0.18
5.0 +_ 0.2
1.15 +_ 0.35
2.075 +_ 0.175
0.23+_ 0.08
1. ANODE
2. CATHODE
SMA(1)
Marking
Cathode Mark
Type Name
U1G
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Junction Capacitance
Thermal Resistance
V_FM
I_RRM
t_rr
C_J
R_th(j-1)
R_th(j-a)
I_FM=1.0A
V_RRM=Rated
I_F=0.5A, I_R=1.0A
V_R=4.0V, f=1MHz
Junction to lead
Junction to ambient
(Note 1)
Notes : 1. P.C.B Mounted on 0.2ƒ0.2 (5.0ƒ5.0mm) Copper Pad Area.
MIN.
-
-
-
-
-
-
TYP.
-
-
-
8
-
-
MAX.
1.3
5
35
-
35
UNIT
V
ǺA
ns
pF
/W
85
/W
2007. 8. 13
Revision No : 1
1/2