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PZTA92 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP high-voltage transistor
SEMICONDUCTOR
TECHNICAL DATA
PZTA92
EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
Complementary to PZTA42.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC *
Tj
-300
-300
-5.0
-500
500
1
150
Storage Temperature
Tstg
-55 150
* Package Mounted On FR-4 PCB 36 18 1.5mm. :
mountina pad for the collector lead min.6cm2
UNIT
V
V
V
mA
mA
W
A
H
L
2
EB
J
1
3
F
F
1
C
2
3
D
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
K
G
DIM MILLIMETERS
A
6.5+_ 0.2
B
3.5+_ 0.2
C
1.8 MAX
D
0.7+0.15/-0.1
E
7+_ 0.3
F
2.3 TYP
G
0.26+0.09/-0.02
H
3.0+0.15/-0.1
J
1.75+_ 0.25
K
0.1 MAX
L
10 MAX
SOT-223
Marking
Type Name
PZTA92
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
V(BR)CBO
V(BE)CEO
DC Current Gain
* hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Transition Frequency
fT
Collector Output Capacitance
Cob
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
TEST CONDITION
IC=-100 A, IE=0
IC=-1.0mA, IB=0
IC=-1.0mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-30mA, VCE=-10V
IC=-20mA, IB=-2.0mA
IC=-20mA, IB=-2.0mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-20V, IE=0, f=1MHz
MIN.
-300
-300
25
40
25
-
-
50
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
-
-0.5
-0.9
-
6.0
UNIT
V
V
V
V
MHz
pF
2004. 05. 21
Revision No : 0
1/2
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