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PZTA44 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistor
SEMICONDUCTOR
TECHNICAL DATA
PZTA44
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
High Breakdown Voltage.
Collector Power Dissipation : PC=2W(TC=25 )
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
(TC=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
500
400
6
300
2
150
-55 150
UNIT
V
V
V
mA
W
A
H
L
2
EB
J
1
3
F
F
1
C
2
3
D
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
K
G
DIM MILLIMETERS
A
6.5+_ 0.2
B
3.5+_ 0.2
C
1.8 MAX
D
0.7+0.15/-0.1
E
7+_ 0.3
F
2.3 TYP
G
0.26+0.09/-0.02
H
3.0+0.15/-0.1
J
1.75+_ 0.25
K
0.1 MAX
L
10 MAX
SOT-223
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (1)
Collector-Emitter Breakdown Voltage (2)
Emitter-Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)CES
V(BR)EBO
Collector Cut off Current
ICBO
Collector Cut off Current
ICES
Emitter Cutoff Current
IEBO
DC Current Gain *
hFE
Collector-Emitter Saturation Voltage *
VCE(sat)
Base-Emitter Saturation Voltage *
VBE(sat)
Collector Output Capacitane
Cob
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
TEST CONDITION
IC=100 A, IE=0
IC=1mA, IB=0
IC=100 A, IB=0
IE=10 A, IC=0
VCB=400V, IE=0
VCB=320V, IE=0
VCE=400V, IB=0
VCE=320V, IB=0
VEB=4V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCB=20V, IE=0, f=1MHz
2005. 1. 17
Revision No : 0
MIN.
500
400
400
6.0
TYP.
-
-
-
-
MAX.
-
-
-
-
UNIT
V
V
V
V
-
-
100
nA
-
-
500
nA
-
-
100
nA
40
-
-
50
-
200
45
-
-
40
-
-
-
-
0.5
V
-
-
0.75
V
-
-
7
pF
1/3
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