PXTA44 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
hHigh Breakdown Voltage.
PXTA44
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
500
Collector-Emitter Voltage
V_CEO
400
Emitter-Base Voltage
V_EBO
6
Collector Current
I_C
300
P_C
500
Collector Power Dissipation
P_C*
1
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* : Mounted on ceramic substrate(250ɛƒ0.8t)
UNIT
V
V
V
mA
mW
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (1)
Collector-Emitter Breakdown Voltage (2)
Emitter-Base Breakdown Voltage
Collector Cut off Current (1)
Collector Cut off Current (2)
Emitter Cutoff Current
V_(BR)CBO
V_(BR)CEO
V_(BR)CES
V_(BR)EBO
I_CBO
I_CES
I_EBO
DC Current Gain *
h_FE
Collector-Emitter Saturation Voltage *
V_CE(sat)
Base-Emitter Saturation Voltage *
V_BE(sat)
*Pulse Test : Pulse Width∔300ǺS, Duty Cycle∔2.0%
TEST CONDITION
I_C=100ǺA, I_E=0
I_C=1mA, I_B=0
I_C=100ǺA, I_B=0
I_E=10ǺA, I_C=0
V_CB=400V, I_E=0
V_CE=400V, I_B=0
V_EB=4V, I_C=0
V_CE=10V, I_C=1mA
V_CE=10V, I_C=10mA
V_CE=10V, I_C=50mA
V_CE=10V, I_C=100mA
I_C=10mA, I_B=1mA
I_C=10mA, I_B=1mA
2011. 5. 25
Revision No : 0
MIN.
500
400
400
6.0
-
-
-
40
50
45
40
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
100
500
100
-
200
-
-
0.5
0.75
UNIT
V
V
V
V
nA
nA
nA
V
V
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