PV1015UDF12B Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – ESD/EMI Filtering

SEMICONDUCTOR
TECHNICAL DATA
PV1015UDF12B
ESD/EMI Filtering
APPLICATION
I/O ESD protection for mobile handsets, notebook, PDAs, etc.
EMI filtering for data ports in cell phones, PDAs, notebook computers
EMI filtering for LCD, camera and chip-to-chip data lines
FEATURES
EMI/RFI filtering
ESD Protection to IEC 61000-4-2 Level 4
Low insertion loss
Good attenuation of high frequency signals
Low clamping voltage
Low operating and leakage current
Six elements in one package
DESCRIPTION
PV1015UDF12B is an EMI filter array with electrostatic discharge (ESD) protection,
which integrates six pi filters (C-R-C). These parts include ESD protection diodes on
every pin, providing a very high level of protection for sensitive electronic components
that may be subjected to electrostatic discharge.
The PV1015UDF12B provides the recommended line termination while implementing a
low pass filter to limit EMI levels and providing ESD protection which exceeds IEC
61000-4-2 level 4 standard. The UDFN package is a very effective PCB space
occupation and a very thin package (0.4mm Pitch, 0.5mm height)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
DC Power Per Resistor
P_R
Power Dissipation
*P_D
Junction Temperature
T_j
Storage Temperature
T_stg
* Total Package Power Dissipation
EQUIVALENT CIRCUIT
FILTERn*
100Ω
FILTERn*
RATING
100
600
150
-55 150
UNIT
mW
A
Pin 1
TOP VIEW
C
E
1
6
GND PAD
12
D⁷
BOTTOM VIEW
KL
SIDE VIEW
1,12 : Filter channel 1
2,11 : Filter channel 2
3,10 : Filter channel 3
4,9 : Filter channel 4
5,8 : Filter channel 5
6,7 : Filter channel 6
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
2.50 +_ 0.10
1.35 +_ 0.10
2.00 +_ 0.10
0.20 +_ 0.05
0.40
0.40 +_ 0.10
0.25 +_ 0.10
0.20 Min
0.50 +_ 0.05
0.127
0.02+0.03/-0.02
UDFN-12B
MARKING
Type Name
V3
Lot No.
RECOMMENEDED FOOTPRINT
(dimensions in mm)
0.40
0.30
0.25
15pF
15pF
1.40
GND
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
Channel Resistance
Capacitance
SYMBOL
V_RWM
V_BR
I_R
fc_-3dB
R_LINE
C_LINE
TEST CONDITION
-
I_t=1mA
V_RWM=3.3V
V_Line=0V, Z_SOURCE=50 , Z_LOAD=50
Between Input and Output
V_Line=0V DC, 1MHz, Between I/O Pins and GND
V_Line=2.5V, 1MHz, Between I/O Pins and GND
MIN.
-
6
-
-
80
36
24
TYP.
-
-
-
110
100
45
30
MAX.
5
-
1.0
-
120
54
36
UNIT
V
V
A
MHz
pF
2009. 6. 3
Revision No : 2
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