PG12GCS23 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TVS Diode Array for ESD Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
350 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 15A(tp=8/20 s)
Standard SOT-23 Package.
Protects one Bidirectional line or two Unidirectional Lines.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Industrial Controls.
Personal digital assistants (PDA’s)
Notebooks, desktops PC, & servers.
Portable instrumentation.
Set-Top Box, DVD Player.
PG12GCS23
TVS Diode Array for ESD
Protection in Portable Electronics
E
L BL
2
3
1
P
P
M
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Operating Temperature
Storage Temperature
SYMBOL
P_PK
I_PP
T_j
T_stg
RATING
350
15
-55 150
-55 150
UNIT
W
A
Marking
3
Lot No.
12 ^{Type Name}
2
1
3
2
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
V_RWM
V_BR
I_R
V_C
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=12V
I_PP=15A, tp=8/20 s
V_R=0V, f=1MHz
Pin 3 to 1 and Pin 3 to 2
MIN.
-
13.3
-
-
-
TYP.
-
-
-
-
MAX.
12
-
0.1
25
UNIT
V
V
A
V
-
120
pF
2003. 3. 26
Revision No : 0
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