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PG12FXUS6 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TVS Diode Array for ESD Protection in Portable Electronics | |||
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SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG12FXUS6
TVS Diode Array for ESD
Protection in Portable Electronics
FEATURES
100 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact).
IEC 61000-4-4(EFT) 40A (tp=5/50 )
IEC 61000-4-5(Lightning) 4.2A (tp=8/20 s)
Protects five I/O lines.
Low clamping voltage.
Low operating and leakage current.
Small package for use in portable electronics.
APPLICATIONS
Cell phone handsets and accessories.
Cordless phones.
Personal digital assistants (PDAâs)
Notebooks, desktops, & servers.
Portable instrumentation.
Set-Top Box, DVD Player.
Digital Camera.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Operating Temperature
Storage Temperature
SYMBOL
PPK
IPP
Tj
Tstg
RATING
100
4.2
-55 150
-55 150
UNIT
W
A
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. D1
2. COMMON ANODE
3. D2
4. D3
5. D4
6. D5
US6
Marking
6
5
4
Type Name
2X
Lot No.
1
2
3
65
D5
D4
4
D3
D1
D2
123
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
VRWM
VBR
IR
VC
Junction Capacitance
CJ
TEST CONDITION
-
It=1mA
VRWM=12V
IPP=4.2A, tp=8/20 s
VR=0V, f=1MHz
Between I/O Pins and GND
MIN.
-
13.3
-
-
TYP.
-
-
-
-
MAX.
12
-
1
24
UNIT
V
V
A
V
-
-
60
pF
2008. 9. 11
Revision No : 2
1/2
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