PG12FBUSV Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TVS Diode Array for ESD Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG12FBUSV
TVS Diode Array for ESD
Protection in Portable Electronics
FEATURES
200 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 8A(tp=8/20 s)
Protects four I/O lines.
Low clamping voltage.
Low operating and leakage current.
Small package for use in protable electronics.
APPLICATIONS
Cellular Phone Handsets and Accessories.
Cordless Phones.
Personal Digital Assistants (PDA’s)
Notebooks, desktops PC, & servers.
Portable Instrumentation.
Set-Top Box, DVD Player.
Digital Camera.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s)
P_PK
Peak Pulse Current (tp=8/20 s)
I_PP
Operating Temperature
T_j
Storage Temperature
T_stg
RATING
200
8
-55 150
-55 150
UNIT
W
A
B
B1
1
5
DIM MILLIMETERS
A
2.00+_ 0.20
2
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. (TVS) D1
2. COMMON ANODE
3. (TVS) D2
4. (TVS) D3
5. (TVS) D4
USV
Marking
5
4
Type Name
2F
12 3
5
4
D4
D3
D1
D2
1 23
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
V_RWM
V_BR
I_R
Clamping Voltage
V_C
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=12V
I_PP=1A, tp=8/20 s
I_PP=8A, tp=8/20 s
V_R=0V, f=1MHz
Between I/O Pins and GND
MIN.
-
13.3
-
-
-
TYP.
-
-
-
-
-
MAX.
12
-
1
19
25
UNIT
V
V
A
V
-
60
75
pF
2008. 9. 10
Revision No : 2
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