PG05TADF10 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TVS Diode Array for ESD Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
30 Watts peak pulse power (tp=8/20 )s
Transient protection for data lines to
IEC 61000-4-2(ESD) 20KV (air/contact)
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
USB 2.0, 10/100/1000 Ethernet, FireWire, DVI, HDMI, S-ATA
Mobile Communication
Consumer Products (STB, MP3, DVD, DSC...)
LCD-Display, Camera
Notebooks and desktop computers, peripherals
PG05TADF10
TVS Diode Array for ESD
Protection in Portable Electronics
A
98
7
6
3
12
4
5
C
F
E
D
1. Input / Output 1
2. Input / Output 2
3. GND
4. Input / Output 3
5. Input / Output 4
DFN10
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
2.3+_ 0.035
1+_ 0.035
2.0
0.2+_ 0.025
0.5
0.4 +_ 0.025
0.35 +_ 0.025
0.94 +_ 0.025
0.31+_ 0.01, -0.02
0.05 MAX
Marking
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Peak Pulse Current (tp=8/20 s)
Operating Temperature Range
Storage Temperature
SYMBOL
I_PP
T_OP
T_stg
RATING
3
-40~125
-55 150
UNIT
A
Type Name
Z1
0825
98
76
Lot No.
12
45
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
V_RWM
V_BR
I_R
Clamping Voltage
V_C
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA (I/O to GND)
V_RWM=5.3V (I/O to GND)
I_PP=1A, tp=8/20 , (I/O to GND)
I_PP=3A, tp=8/20 , (I/O to GND)
V_R=0V, f=1MHz (I/O to GND)
2009. 12. 21
Revision No : 0
MIN.
-
6
-
-
-
-
TYP.
-
-
-
10
12
0.4
MAX.
5.3
-
50
13
15
0.6
UNIT
V
V
A
V
pF
1/3