PG05HBTS6 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TVS Diode Array for ESD Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
350 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 24A(tp=8/20 s)
Unidirectional protection of four I/O lines.
Low clamping voltage.
Low operating and leakage current.
Small package for use in portable electronics.
APPLICATIONS
Cell phone handsets and accessories.
Cordless Phones.
Personal digital assistants (PDA’s)
Notebooks, desktops PC & servers.
Portable instrumentation.
Set-Top Bosx, DVD Player.
Digital Camera.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Operating Temperature
Storage Temperature
SYMBOL
P_PK
I_PP
T_j
T_stg
RATING
350
24
-55 150
-55 150
UNIT
W
A
PG05HBTS6
TVS Diode Array for ESD
Protection in Portable Electronics
E
K
B
K
1
6
2
5
3
4
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. (TVS) D1
2. COMMON ANODE
3. (TVS) D2
4. (TVS) D3
5. COMMON ANODE
6. (TVS) D4
TS6
Marking
6
5
5H
4
Lot No.
1
2
3
6
5
4
D4
D3
D1
D2
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
V_RWM
V_BR
I_R
Clamping Voltage
V_C
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=5V
I_PP=5A, tp=8/20 s
I_PP=24A, tp=8/20 s
V_R=0V, f=1MHz
Between I/O Pins and GND
MIN.
-
6
-
-
-
-
TYP.
-
-
-
-
-
MAX.
5
-
20
9.8
14.5
UNIT
V
V
A
V
325
400
pF
2003. 7. 10
Revision No : 0
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