PG05GBUSV Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TVS Diode Array for ESD Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
200 Watts peak pulse power (tp=8/20 s)
Transient protection for high-speed data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 24A(tp=8/20 s)
Protects four I/O lines.
Low clamping voltage.
Low operating and leakage current.
Small package for use in protable electronics.
APPLICATIONS
Cellular Phone Handsets and Accessories.
Cordless Phones.
Personal Digital Assistants (PDA’s)
Notebooks, desktops PC, & servers.
Portable Instrumentation.
Set-Top Box, DVD Player.
Digital Camera.
PG05GBUSV
TVS Diode Array for ESD
Protection in Portable Electronics
B
B1
1
5
DIM MILLIMETERS
A
2.00+_ 0.20
2
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. (TVS) D1
2. COMMON ANODE
3. (TVS) D2
4. (TVS) D3
5. (TVS) D4
USV
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s)
P_PK
Peak Pulse Current (tp=8/20 s)
I_PP
Operating Temperature
T_j
Storage Temperature
T_stg
RATING
200
24
-55 150
-55 150
UNIT
W
A
Marking
5
4
Type Name
5G
1
2
3
5
4
D4
D3
D1
D2
1
2
3
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
V_RWM
V_BR
I_R
Clamping Voltage
V_C
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=5V
I_PP=1A, tp=8/20 s
I_PP=24A, tp=8/20 s
V_R=0V, f=1MHz
Between I/O Pins and GND
2008. 9. 10
Revision No : 3
MIN.
-
6
-
-
-
TYP.
-
-
-
-
-
MAX.
5
-
10
9.5
12.5
UNIT
V
V
A
V
-
150
175
pF
1/2