PG05FSESC_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
h100 Watts peak pulse power (tp=8/20Ǻs)
hTransient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 10A(tp=8/20Ǻs)
hSmall package for use in portable electronics.
hSuitable replacement for Multi-Layer Varistors in ESD
protection applications.
(* Multi-Layer Varistors [0402 Size])
hProtects on I/O or power line.
hLow clamping voltage.
hLow leakage current.
APPLICATIONS
hCell phone handsets and accessories.
hMicroprocessor based equipment.
hPersonal digital assistants (PDA s)
hNotebooks, desktops, & servers.
hPortable instrumentation.
hPagers peripherals.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Peak Pulse Power (tp=8/20Ǻs)
Peak Pulse Current (tp=8/20Ǻs)
Junction Temperature
Storage Temperature
SYMBOL
P_PK
I_PP
T_j
T_stg
RATING
100
10
-55q150
-55q150
UNIT
W
A


PG05FSESC
Single Line TVS Diode for ESD
Protection in Portable Electronics
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
V_RWM
V_BR
I_R
Clamping Voltage
V_C
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=5V
I_PP=5A, tp=8/20Ǻs
I_PP=10A, tp=8/20Ǻs
V_R=0V, f=1MHz
MIN.
-
6
-
-
-
-
TYP.
-
-
-
-
-
-
MAX.
5
-
5
9.8
10.0
80
UNIT
V
V
ǺA
V
pF
2014. 3. 31
Revision No : 2
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