PG05DXTE6 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
30 Watts peak pulse power (tp=8/20 )s
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
PG05DXTE6
TVS Diode for ESD
Protection in Portable Electronics
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0 +_ 0.05
2
5
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
J
0.12+_ 0.05
P
P
P
5
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA’s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Junction Temperature
Storage Temperature
SYMBOL
P_PK
T_j
T_stg
RATING
30
150
-55 150
UNIT
W
1. (TVS) D1 CATHODE
2. COMMON ANODE
3. (TVS) D2 CATHODE
4. (TVS) D3 CATHODE
5. N. C.
6. (TVS) D4 CATHODE
TES6
Marking
6
5
4
Type Name
5D
1
2
3
654
D4 D3
D1 D2
123
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
V_RWM
V_BR
I_R
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=3V
V_R=0V, f=1MHz
MIN.
-
6.1
-
-
TYP.
-
-
-
-
MAX.
5
7.2
0.5
15
UNIT
V
V
A
pF
2010. 2. 5
Revision No : 4
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