PG05DBTFC_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
h50 Watts peak pulse power (tp=8/20Ǻs)
hTransient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20Ǻs)
hBidirectional Type Pin Configuration Structure.
hSmall package for use in portable electronics.
hSuitable replacement for Multi-Layer Varistors in ESD protection applications.
hProtects one I/O or power line.
hLow clamping voltage.
hLow leakage current.
APPLICATIONS
hCell phone handsets and accessories.
hMicroprocessor based equipment.
hPersonal digital assistants (PDA s)
hNotebooks, desktops, & servers.
hPortable instrumentation.
hPagers peripherals.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20Ǻs)
P_PK
Junction Temperature
T_j
Storage Temperature
T_stg
RATING
50
-55q150
-55q150
UNIT
W


PG05DBTFC
TVS Diode for ESD
Protection in Portable Electronics
CATHODE MARK
B
A
H
G
DIM
A
B
C
D
E
F
G
H
MILLIMETERS
1.00+_ 0.05
0.80+0.10/-0.05
0.60+_ 0.05
0.30+_ 0.05
0.40 MAX
0.13+_ 0.05
0.10 MAX
0.25 MAX
TFSC
Marking
2
1
2
1
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
V_RWM
Reverse Breakedown Voltage
V_BR
Reverse Leakage Current
I_R
Clamping Voltage
V_C
Junction Capacitance
C_J
TEST CONDITION
-
I_t=‚1mA
V_RWM=‚5V
I_PP=‚5A, tp=8/20Ǻs
V_R=0V, f=1MHz
MIN.
-
‚5.8
-
-
-
TYP.
-
-
0.5
-
15
MAX.
‚5
‚7.8
1
‚17
25
UNIT
V
V
ǺA
V
pF
2013. 1. 03
Revision No : 6
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