PG05DBEL2 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TVS Diode for ESD Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG05DBEL2
TVS Diode for ESD
Protection in Portable Electronics
FEATURES
h30 Watts peak pulse power (tp=8/20Ǻs)
hTransient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-5(Lightning) 2A(tp=8/20Ǻs)
hBidirectional Type Pin Configuration Structure.
hSmall package for use in portable electronics.
hSuitable replacement for Multi-Layer Varistors in ESD protection applications.
hProtects one I/O or power line.
hLow clamping voltage.
hLow leakage current.
APPLICATIONS
hCell phone handsets and accessories.
hMicroprocessor based equipment.
hPersonal digital assistants (PDA s)
hNotebooks, desktops, & servers.
hPortable instrumentation.
hPagers peripherals.
1
A
J
I
2
B
C
1. ANODE
2. CATHCDE
2
E
F
H
1
G
D
G
DIM
A
B
C
D
E
F
G
H
I
J
MILLIMETERS
0.6 +_ 0.05
0.3 +_ 0.05
0.28 +_ 0.05
0.25 +_ 0.05
0.18 +_ 0.05
Typ 0.36
0.025 +_ 0.02
0.2 +_ 0.05
Max 0.3
Typ 0.1
ELP-2
Marking
MAXIMUM RATING (Ta=25)
6
CHARACTERISTIC
Peak Pulse Power (tp=8/20Ǻs)
Junction Temperature
Storage Temperature
SYMBOL
P_PK
T_j
T_stg
RATING
30
-55q150
-55q150
UNIT
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
V_RWM
Reverse Breakedown Voltage
V_BR
Reverse Leakage Current
I_R
Clamping Voltage
V_C
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=5V
I_PP=2A, tp=8/20Ǻs
V_R=0V, f=1MHz
MIN.
-
5.8
-
-
-
TYP.
-
-
-
-
5
MAX.
5
7.8
5
15
9
UNIT
V
V
ǺA
V
pF
2012. 8. 20
Revision No : 0
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