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PG05BSESC_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – Protection in Portable Electronics
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
hTransient voltage protection for data lines.
hIEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact).
hSmall package for portable electronics.
hSuitable replacement for Varistors in ESD protection applications.
hProtects one I/O or power line.
hLow clamping voltage.
hLow leakage current.
APPLICATIONS
hCell phone handsets and accessories.
hMicroprocessor based equipment.
hPersonal digital assistants (PDA s).
hNotebooks, desktops, & servers.
hPortable instrument
hPagers peripherals.
PG05BSESC
TVS Diode for ESD
Protection in Portable Electronics
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20É«)
PPK
Peak Pulse Current (tp=8/20É«)
IPP
Junction Temperature
Tj
Storage Temperature
Tstg
RATING
30
1.6
150
-55q150
UNIT
W
A


Marking
Type Name
D2
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
VRWM
VBR
IR
Claming Voltage
VC
Series Resistance
RS
Junction Capacitance
CJ
TEST CONDITION
-
It=5mA
VRWM=3.5V
IPP=1A, tp=8/20É«
IPP=1.6A, tp=8/20É«
VR=1V, f=900MHz
VR=0V, f=1MHz
MIN.
-
6.65
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
MAX.
5
7.45
0.5
12
18
60
5.0
UNIT
V
V
ǺA
V
V
ʃ
pF
2014. 3. 31
Revision No : 2
1/2