PG03GXUS6 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TVS Diode Array for ESD Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG03GXUS6
TVS Diode Array for ESD
Protection in Portable Electronics
FEATURES
100 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact).
IEC 61000-4-4(EFT) 40A (tp=5/50 )
IEC 61000-4-5(Lightning) 14.5A (tp=8/20 s)
Protects five I/O lines.
Low clamping voltage.
Low operating and leakage current.
Small package for use in portable electronics.
APPLICATIONS
Cell phone handsets and accessories.
Cordless phones.
Personal digital assistants (PDA’s)
Notebooks, desktops, & servers.
Portable instrumentation.
Set-Top Box, DVD Player.
Digital Camera.
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D _B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. D1
2. COMMON ANODE
3. D2
4. D3
5. D4
6. D5
US6
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Operating Temperature
Storage Temperature
SYMBOL
P_PK
I_PP
T_j
T_stg
RATING
100
14.5
-55 150
-55 150
UNIT
W
A
Marking
6
5
4
Type Name
3X
Lot No.
1
2
3
65
D5
D4
4
D3
D1
D2
123
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
V_RWM
V_BR
I_R
V_C
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=3.3V
I_PP=14.5A, tp=8/20 s
V_R=0V, f=1MHz
Between I/O Pins and GND
MIN.
-
4
-
TYP.
-
-
-
MAX.
3.3
-
50
10.9
UNIT
V
V
A
-
-
200
pF
2008. 9. 11
Revision No : 1
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