PG03FBESC Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TVS Diode for ESD Protection in Portable Electronics

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
50 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20 s)
Bidirectional Type Pin Configuration Structure.
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA’s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Junction Temperature
Storage Temperature
SYMBOL
P_PK
T_j
T_stg
RATING
50
-55 150
-55 150
UNIT
W
PG03FBESC
TVS Diode for ESD
Protection in Portable Electronics
C
1
2
D
1. ANODE
2. ANODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
2
1
3B
2
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
V_RWM
V_BR
I_R
Junction Capacitance
C_J
TEST CONDITION
-
I_t=1mA
V_RWM=3.3V
V_R=0V, f=1MHz
MIN.
-
4.2
-
-
TYP.
-
-
-
-
MAX.
3.3
6.2
20
80
UNIT
V
V
A
pF
2006. 11. 8
Revision No : 3
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